A Scientific Article Co-Authored by UFAZ Lecturer Published in a Prestigious Journal Indexed in "Web of Science" and "Scopus"

A scientific article co-authored by Dr. Dunya Babanly, Doctor of Chemical Sciences and a researcher teacher at the French-Azerbaijani University (UFAZ), and Dr. Elnur Orujlu, PhD in Chemistry and Head of the “Nanomaterials and Nanotechnologies” Research Laboratory under the Faculty of Oil and Mechanical Engineering at the Azerbaijan State Oil and Industry University (ASOIU), has been published in the International Journal of Thermophysics, a journal of Springer Nature.

The article, titled “Standard Thermodynamic Functions of Sb₂Te₃-Rich Germanium Antimony Tellurides: EMF Measurements”, was published in this high-impact journal indexed in Web of Science and Scopus, which is classified as Q2 and has an impact factor of 2.9. The publication underscores the international recognition of the research’s scientific value.

The study focuses on the investigation of fundamental thermodynamic properties of metal chalcogenide materials with a layered tetradymite-like crystal structure—materials that are considered promising for next-generation electronics, including spintronics and quantum computing. Specifically, it examines the thermodynamic behavior of Sb₂Te₃-rich Ge–Sb–Te semiconductor tellurides composed of germanium, antimony, and tellurium.

In the first stage of the research, solid-phase equilibria in the GeSb₂Te₄–Sb₂Te₃–Te system were established using physico-chemical analysis methods. In the next stage, electromotive force (EMF) measurements were conducted to determine the standard Gibbs free energy of formation, enthalpy, and absolute entropy for compounds such as GeSb₂Te₄, GeSb₄Te₇, GeSb₆Te₁₀, and Sb₂Te₃-based solid solutions. The results represent a self-consistent set of values that define the fundamental physicochemical properties of these materials.

This research contributes significantly to the molecular-level understanding of the Sb₂Te₃-rich Ge–Sb–Te system and expands its potential for practical applications in advanced electronic technologies.